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KST4403
KST4403
Switching Transistor
3
2 1
SOT-23
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature
1. Base 2. Emitter 3. Collector
Value -40 -40 -5 -600 350 150
Units V V V mA mW C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO IBEV ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain Test Condition IC= -0.1mA, IE=0 IC= -1.0mA, IB=0 IE= -0.1mA, IC=0 VCE= -35V, VBE= -0.4V VCE= -35V, VBE= -0.4V VCE= -1V, IC= -0.1mA VCE= -1V, IC= -1.0mA VCE= -1V, IC= -10mA *VCE= -2V, IC= -150mA *VCE= -2V, IC= -500mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -20mA, VCE= -10V f=100MHz VCB= -10V, IE=0 f=140KHz VCC= -30V, VBE= -2V IC= -150mA, IB1= -15mA VCC= -30V, IC= -150mA IB1=IB2= -15mA Marking -0.75 200 8.5 35 255 30 60 100 100 20 Min. -40 -40 -5 -0.1 -0.1 Max. Units V V V A A
300 -0.4 -0.75 -0.95 -1.3 V V V V MHz pF ns ns
VCE (sat) VBE (sat) fT Cob tON tOFF
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time
* Pulse Test: Pulse Width300s, Duty Cycle2%
2T
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST4403
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
IC = 10 IB
hFE, DC CURRENT GAIN
VCE = -2V
-1
V BE(sat)
100
-0.1
V CE(sat)
10 -1 -10 -100 -1000
-0.01 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
100
-100
IC[mA], COLLECTOR CURRENT
f = 140KHz IE = 0
COb[pF], CAPACITANCE
VCE = -10V
10
-10
-1 -0.0
1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -10 -100
VBE[V], BASE-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
VCE = -10V
100
10
1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST4403
Package Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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